Heterostructures of wide-bandgap oxide semiconductors with tunable phase composition

Gallium oxide is a wide-bandgap semiconductor that has been applied in high-voltage (over 4500 V) rectifiers. Gallium oxide has also important applications in high-voltage transistors and other electronic devices that are needed for more efficient use of sustainable energy. However, too low conductivity and problems with achieving sufficiently high p-type conductivity limits the application of this material and related wide-bandgap semiconductors. The problem can be solved by using crystal phases with high charge-carrier mobilities, solid solutions of different oxides, and heterostructures permitting to achieve high mobilities in 2-dimensional electron and hole gas formed at interfaces of two materials. The aim of planned research is atomic-layer synthesis and investigation of these kinds of materials and heterostructures, and application of those in electronic devices, e.g. in rectifiers, radiation detectors, betavoltaic devices, field-effect transistors, and memory devices.